AON6708. Аналоги и основные параметры
Наименование производителя: AON6708
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 62 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 756 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для AON6708
- подборⓘ MOSFET транзистора по параметрам
AON6708 даташит
..1. Size:155K aosemi
aon6708.pdf 
AON6708 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6708 uses advanced trench ID = 30A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)
8.1. Size:269K aosemi
aon6702.pdf 
AON6702 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6702 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
8.2. Size:257K aosemi
aon6704a.pdf 
AON6704A 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6704A uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.1. Size:268K 1
aon6786.pdf 
AON6786 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.2. Size:262K 1
aon6790.pdf 
AON6790 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.3. Size:331K aosemi
aon6792.pdf 
AON6792 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:301K aosemi
aon6774.pdf 
AON6774 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.5. Size:243K aosemi
aon6794.pdf 
AON6794 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:153K aosemi
aon6718l.pdf 
AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V) ideally suited for use as a low side switch in CPU core RDS(ON)
9.7. Size:354K aosemi
aon6734.pdf 
AON6734 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:279K aosemi
aon6716.pdf 
AON6716 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.9. Size:313K aosemi
aon6760.pdf 
AON6760 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.10. Size:268K aosemi
aon6788.pdf 
AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.11. Size:133K aosemi
aon6712.pdf 
AON6712 30V N-Channel MOSFET SRFET TM General Description Product Summary The AON6712 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 20A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON)
9.12. Size:340K aosemi
aon6756.pdf 
AON6756 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.13. Size:287K aosemi
aon6754.pdf 
AON6754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.14. Size:293K aosemi
aon6758.pdf 
AON6758 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.15. Size:256K aosemi
aon6780.pdf 
AON6780 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.16. Size:290K aosemi
aon6752.pdf 
AON6752 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.17. Size:345K aosemi
aon6796.pdf 
AON6796 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:242K aosemi
aon6764.pdf 
AON6764 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:128K aosemi
aon6710.pdf 
AON6710 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6710 uses advanced trench ID = 20A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)
9.20. Size:255K aosemi
aon6782.pdf 
AON6782 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Другие MOSFET... AON6418
, AON6422
, AON6454
, AON6514
, AON6534
, AON6542
, AON6702
, AON6704A
, AOD4184A
, AON6710
, AON6712
, AON6716
, 2SK0601
, 2SK0615
, 2SK066400L
, 2SK0664G0L
, 2SK066500L
.
History: BSS138BKS
| SVSP20N60TD2
