2SK066400L
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK066400L
Marking Code: 3N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
tonⓘ - Turn-on Time: 10
nS
Cossⓘ -
Output Capacitance: 5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50
Ohm
Package:
SOT323
2SK066400L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK066400L
Datasheet (PDF)
..1. Size:76K panasonic
2sk066400l.pdf
Silicon MOS FETs (Small Signal)2SK0664 (2SK664)Silicon N-Channel MOS FETunit: mm0.15+0.100.3+0.10.05For switching 0.03 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto-1 2matic insertion through the tape/magazine packing.(0.65) (0.65)1.30.12.00.210 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol R
7.1. Size:76K panasonic
2sk0664g0l.pdf
Silicon MOS FETs (Small Signal)2SK0664 (2SK664)Silicon N-Channel MOS FETunit: mm0.15+0.100.3+0.10.05For switching 0.03 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto-1 2matic insertion through the tape/magazine packing.(0.65) (0.65)1.30.12.00.210 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol R
8.1. Size:220K panasonic
2sk066500l 2sk0665g0l.pdf
Silicon MOSFETs (Small Signal)2SK0665 (2SK665)Silicon N-channel MOSFETUnit: mmFor switching circuits0.15+0.100.3+0.10.050.03 Features High-speed switching Small drive current owing to high input inpedance1 2 High electrostatic breakdown voltage(0.65) (0.65)1.30.1 Absolute Maximum Ratings Ta = 25C2.00.2Parameter Symbol Rating Unit
9.1. Size:107K panasonic
2sk0601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK0601 (2SK601)Silicon N-channel MOSFETUnit: mmFor switching circuits4.50.11.60.2 1.50.1 Features Low drain-souce ON resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL1 23 Mini-power type package, allowing downsizing of t
9.2. Size:193K panasonic
2sk0615.pdf
Silicon MOS FETs (Small Signal)2SK0615 (2SK615)Silicon N-Channel MOS FETFor switchingUnit: mm Features Low ON-resistance 2.50.16.90.1(1.0)(1.5) High-speed switching(1.5) Allowing to be driven directly by CMOS and TTLR 0.9 M type package, allowing easy automatic and manual insertion asR 0.7well as stand-alone fixing to the printed circuit board. Absolute Max
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