All MOSFET. 2SK1643 Datasheet

 

2SK1643 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1643

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO220AB

2SK1643 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1643 Datasheet (PDF)

1.1. 2sk1643.pdf Size:670K _update

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1.2. 2sk1643.pdf Size:214K _inchange_semiconductor

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isc N-Channel MOSFET Transistor 2SK1643 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900 (Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(T =25

 4.1. 2sk1642.pdf Size:669K _update

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4.2. 2sk1649.pdf Size:279K _update

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1649 DESCRIPTION ·Drain Current –I =6A@ T =25℃ D C ·Drain Source Voltage- : V =900 (Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(T =25

 4.3. 2sk1641.pdf Size:73K _update

2SK1643 2SK1643

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

4.4. rej03g0963 2sk1647lsds.pdf Size:107K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. 2sk1647.pdf Size:55K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.6. 2sk1649.pdf Size:217K _inchange_semiconductor

2SK1643 2SK1643

isc N-Channel MOSFET Transistor 2SK1649 DESCRIPTION ·Drain Current –I =6A@ T =25℃ D C ·Drain Source Voltage- : V =900 (Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a UNI SYMBOL ARAME

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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