IRF9140 Datasheet and Replacement
Type Designator: IRF9140
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85(max) nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3
IRF9140 substitution
IRF9140 Datasheet (PDF)
irf9140.pdf

PD - 93976AREPETITIVE AVALANCHE AND dv/dt RATED IRF9140HEXFETTRANSISTORS 100V, P-CHANNELTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF9140 -100V 0.2 -18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig
2n6804 irf9130.pdf

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr
Datasheet: IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 , IRF9130 , 60N06 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , IRF9511 , IRF9512 , IRF9513 .
History: JCS8N60S
Keywords - IRF9140 MOSFET datasheet
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History: JCS8N60S



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