All MOSFET. IRF9140 Datasheet

 

IRF9140 Datasheet and Replacement


   Type Designator: IRF9140
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85(max) nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3
 

 IRF9140 substitution

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IRF9140 Datasheet (PDF)

 ..1. Size:148K  international rectifier
irf9140.pdf pdf_icon

IRF9140

PD - 93976AREPETITIVE AVALANCHE AND dv/dt RATED IRF9140HEXFETTRANSISTORS 100V, P-CHANNELTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF9140 -100V 0.2 -18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 9.1. Size:149K  international rectifier
2n6804 irf9130.pdf pdf_icon

IRF9140

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 9.2. Size:117K  njs
irf9150 irf9151.pdf pdf_icon

IRF9140

 9.3. Size:520K  samsung
irfp9130-33 irf9130-33 irf9530-33.pdf pdf_icon

IRF9140

Datasheet: IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 , IRF9130 , RU6888R , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , IRF9511 , IRF9512 , IRF9513 .

History: FDS6680A | BFC41

Keywords - IRF9140 MOSFET datasheet

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