All MOSFET. 2SK2082-01 Datasheet

 

2SK2082-01 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2082-01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO3P

2SK2082-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2082-01 Datasheet (PDF)

1.1. 2sk2082-01.pdf Size:219K _update

2SK2082-01
2SK2082-01

N-channel MOS-FET 2SK2082-01 FAP-IIA Series 900V 1,4Ω 9A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

4.1. 2sk2080-01r.pdf Size:177K _update

2SK2082-01
2SK2082-01



4.2. 2sk2081-01.pdf Size:218K _update

2SK2082-01
2SK2082-01

FUJI POWER MOSFET 2SK2081-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier EIAJ SC-65 Equivalent circuit schem

 4.3. 2sk2088 2sk2089.pdf Size:98K _update

2SK2082-01
2SK2082-01



4.4. 2sk2084s-l.pdf Size:99K _update

2SK2082-01
2SK2082-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. 2sk208.pdf Size:305K _toshiba

2SK2082-01
2SK2082-01

2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications • High breakdown voltage: VGDS = -50 V • High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS • Low noise: NF = 0.5dB (typ.) (R = 100 k?, f = 120 Hz) G • Small package. Maximum Ratings (Ta = = 2

4.6. 2sk2083.pdf Size:119K _sanyo

2SK2082-01
2SK2082-01

Ordering number:ENN4617 N-Channel Silicon MOSFET 2SK2083 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Micaless package facilitating mounting. [2SK2083] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : SMP-FD Specifications Absolute Ma

4.7. 2sk2084.pdf Size:88K _renesas

2SK2082-01
2SK2082-01

2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package code: PRSS0004Z

4.8. rej03g0995 2sk2084lsds.pdf Size:101K _renesas

2SK2082-01
2SK2082-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: 2SK2045LS , 2SK2052-R , 2SK2054C , 2SK2057 , 2SK2059L , 2SK2059S , 2SK2080-01R , 2SK2081-01 , IRFP260 , 2SK2084S , 2SK2088 , 2SK2089 , 2SK319 , 2SK3192 , 2SK320 , 2SK3203L , 2SK3203S .

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