2SK1008 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1008

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO220C

2SK1008 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1008 Datasheet (PDF)

1.1. 2sk1008-01.pdf Size:133K _update

1.2. 2sk1008.pdf Size:265K _update

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION ·Drain Current –I =4.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo

4.1. 2sk1006-01m.pdf Size:127K _update

4.2. 2sk1001.pdf Size:125K _update

4.3. 2sk1009-01.pdf Size:167K _update

4.4. 2sk1007.pdf Size:61K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

4.5. 2sk1006.pdf Size:73K _update