All MOSFET. 2SK1629-E1-E Datasheet

 

2SK1629-E1-E MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1629-E1-E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 140 nS

Drain-Source Capacitance (Cd): 780 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO264

2SK1629-E1-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1629-E1-E Datasheet (PDF)

1.1. 2sk1629-e1-e.pdf Size:268K _update

2SK1629-E1-E
2SK1629-E1-E

 Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200 500V - 30A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS= 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A (Package n

4.1. 2sk1626 2sk1627.pdf Size:194K _update

2SK1629-E1-E
2SK1629-E1-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk1628.pdf Size:82K _renesas

2SK1629-E1-E
2SK1629-E1-E

2SK1628, 2SK1629 Silicon N Channel MOS FET REJ03G0960-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain 3. Sour

 4.3. rej03g0960 2sk1628ds.pdf Size:118K _renesas

2SK1629-E1-E
2SK1629-E1-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g0958 2sk1623lsds.pdf Size:102K _renesas

2SK1629-E1-E
2SK1629-E1-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. 2sk1623.pdf Size:89K _renesas

2SK1629-E1-E
2SK1629-E1-E

2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0300 (Previous: ADE-208-1299) Rev.3.00 Jan 10, 2006 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS

4.6. 2sk1620.pdf Size:90K _renesas

2SK1629-E1-E
2SK1629-E1-E

2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET REJ03G0957-0200 (Previous: ADE-208-1298) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AE-A RENESAS Pa

4.7. 2sk162.pdf Size:57K _nec

2SK1629-E1-E
2SK1629-E1-E



Datasheet: 2SK1590C , 2SK1600 , 2SK1601 , 2SK1602 , 2SK1603 , 2SK160A , 2SK1626 , 2SK1627 , IRFBC40 , 2SK1660 , 2SK1662M , 2SK1681 , 2SK1683 , 2SK2180 , 2SK2182 , 2SK2183 , 2SK2185 .

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