2SK1629-E1-E - описание и поиск аналогов

Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200 500V - 30A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.22 typ. (at ID = 15 A, VGS= 10 V, Ta = 25 C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZC-A (Package n

isc N-Channel MOSFET Transistor 2SK1629 ESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =0) 500 V DSS GS V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1628, 2SK1629 Silicon N Channel MOS FET REJ03G0960-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name TO-3PL) D G 1. Gate 2. D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0300 (Previous ADE-208-1299) Rev.3.00 Jan 10, 2006 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET REJ03G0957-0200 (Previous ADE-208-1298) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code PRSS0004AE

2SK1623 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1623L FEATURES With TO-262 packaging High speed switching Low driving power Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE