2SK2180 Datasheet and Replacement
Type Designator: 2SK2180
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
tonⓘ - Turn-on Time: 45
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3
Ohm
Package:
TO220
- MOSFET Cross-Reference Search
2SK2180 Datasheet (PDF)
..1. Size:181K shindengen
2sk2180.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2180Case : E-packCase : TO-220(Unit : mm)(F3V50VX2)500V3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High v
..2. Size:229K inchange semiconductor
2sk2180.pdf 
isc N-Channel MOSFET Transistor 2SK2180DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power amplifierHigh voltage power supplyInverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE U
0.1. Size:214K inchange semiconductor
2sk2180-01.pdf 
isc N-Channel MOSFET Transistor 2SK2180-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =
8.1. Size:260K shindengen
2sk2182.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2182Case : E-packCase : FTO-220(Unit : mm)(F3F50VX2)500V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High
8.2. Size:234K shindengen
2sk2186.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2186Case : E-packCase : TO-220(Unit : mm)(F10V50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hig
8.3. Size:240K shindengen
2sk2188 f10f50vx2.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2188Case : E-packCase : FTO-220(Unit : mm)(F10F50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hi
8.4. Size:262K shindengen
2sk2189.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2189Case : E-packCase : MTO-3P(Unit : mm)(F10W50VX2)500V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol
8.5. Size:253K shindengen
2sk2185.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2185Case : E-packCase : FTO-220(Unit : mm)(F5F50VX2)500V5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High
8.6. Size:211K inchange semiconductor
2sk2188.pdf 
isc N-Channel MOSFET Transistor 2SK2188DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.7. Size:211K inchange semiconductor
2sk2182.pdf 
isc N-Channel MOSFET Transistor 2SK2182DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.8. Size:59K inchange semiconductor
2sk2183.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2183 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag
8.9. Size:214K inchange semiconductor
2sk2186.pdf 
isc N-Channel MOSFET Transistor 2SK2186DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.10. Size:211K inchange semiconductor
2sk2185.pdf 
isc N-Channel MOSFET Transistor 2SK2185DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
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History: HM8205Q
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Keywords - 2SK2180 MOSFET datasheet
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