All MOSFET. 2SK2189 Datasheet

 

2SK2189 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2189
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 70 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO247

 2SK2189 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2189 Datasheet (PDF)

 ..1. Size:262K  shindengen
2sk2189.pdf

2SK2189
2SK2189

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2189Case : E-packCase : MTO-3P(Unit : mm)(F10W50VX2)500V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol

 8.1. Size:260K  shindengen
2sk2182.pdf

2SK2189
2SK2189

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2182Case : E-packCase : FTO-220(Unit : mm)(F3F50VX2)500V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High

 8.2. Size:181K  shindengen
2sk2180.pdf

2SK2189
2SK2189

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2180Case : E-packCase : TO-220(Unit : mm)(F3V50VX2)500V3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High v

 8.3. Size:234K  shindengen
2sk2186.pdf

2SK2189
2SK2189

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2186Case : E-packCase : TO-220(Unit : mm)(F10V50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hig

 8.4. Size:240K  shindengen
2sk2188 f10f50vx2.pdf

2SK2189
2SK2189

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2188Case : E-packCase : FTO-220(Unit : mm)(F10F50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hi

 8.5. Size:253K  shindengen
2sk2185.pdf

2SK2189
2SK2189

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2185Case : E-packCase : FTO-220(Unit : mm)(F5F50VX2)500V5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High

 8.6. Size:211K  inchange semiconductor
2sk2188.pdf

2SK2189
2SK2189

isc N-Channel MOSFET Transistor 2SK2188DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.7. Size:211K  inchange semiconductor
2sk2182.pdf

2SK2189
2SK2189

isc N-Channel MOSFET Transistor 2SK2182DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.8. Size:229K  inchange semiconductor
2sk2180.pdf

2SK2189
2SK2189

isc N-Channel MOSFET Transistor 2SK2180DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power amplifierHigh voltage power supplyInverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE U

 8.9. Size:59K  inchange semiconductor
2sk2183.pdf

2SK2189
2SK2189

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2183 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag

 8.10. Size:214K  inchange semiconductor
2sk2186.pdf

2SK2189
2SK2189

isc N-Channel MOSFET Transistor 2SK2186DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.11. Size:211K  inchange semiconductor
2sk2185.pdf

2SK2189
2SK2189

isc N-Channel MOSFET Transistor 2SK2185DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.12. Size:214K  inchange semiconductor
2sk2180-01.pdf

2SK2189
2SK2189

isc N-Channel MOSFET Transistor 2SK2180-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =

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