2SK2189 datasheet, аналоги, основные параметры
Наименование производителя: 2SK2189
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
ton ⓘ - Время включения: 70 ns
Cossⓘ - Выходная емкость: 200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO247
Аналог (замена) для 2SK2189
- подборⓘ MOSFET транзистора по параметрам
2SK2189 даташит
..1. Size:262K shindengen
2sk2189.pdf 
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2189 Case E-pack Case MTO-3P (Unit mm) (F10W50VX2) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High vol
8.1. Size:260K shindengen
2sk2182.pdf 
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2182 Case E-pack Case FTO-220 (Unit mm) (F3F50VX2) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High
8.2. Size:181K shindengen
2sk2180.pdf 
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2180 Case E-pack Case TO-220 (Unit mm) (F3V50VX2) 500V3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High v
8.3. Size:234K shindengen
2sk2186.pdf 
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2186 Case E-pack Case TO-220 (Unit mm) (F10V50VX2) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input Hig
8.4. Size:240K shindengen
2sk2188 f10f50vx2.pdf 
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2188 Case E-pack Case FTO-220 (Unit mm) (F10F50VX2) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input Hi
8.5. Size:253K shindengen
2sk2185.pdf 
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2185 Case E-pack Case FTO-220 (Unit mm) (F5F50VX2) 500V5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High
8.6. Size:211K inchange semiconductor
2sk2188.pdf 
isc N-Channel MOSFET Transistor 2SK2188 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
8.7. Size:211K inchange semiconductor
2sk2182.pdf 
isc N-Channel MOSFET Transistor 2SK2182 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
8.8. Size:229K inchange semiconductor
2sk2180.pdf 
isc N-Channel MOSFET Transistor 2SK2180 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power amplifier High voltage power supply Inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE U
8.9. Size:59K inchange semiconductor
2sk2183.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2183 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag
8.10. Size:214K inchange semiconductor
2sk2186.pdf 
isc N-Channel MOSFET Transistor 2SK2186 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
8.11. Size:211K inchange semiconductor
2sk2185.pdf 
isc N-Channel MOSFET Transistor 2SK2185 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
8.12. Size:214K inchange semiconductor
2sk2180-01.pdf 
isc N-Channel MOSFET Transistor 2SK2180-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =
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