IRF9512 Datasheet and Replacement
Type Designator: IRF9512
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 2.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 85
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
IRF9512 Datasheet (PDF)
8.2. Size:1126K international rectifier
irf9510pbf.pdf 
PD- 95410IRF9510PbF Lead-Free06/15/04Document Number: 91072 www.vishay.com1IRF9510PbFDocument Number: 91072 www.vishay.com2IRF9510PbFDocument Number: 91072 www.vishay.com3IRF9510PbFDocument Number: 91072 www.vishay.com4IRF9510PbFDocument Number: 91072 www.vishay.com5IRF9510PbFDocument Number: 91072 www.vishay.com6IRF9510PbFDocument Number: 91
8.4. Size:1061K international rectifier
irf9510spbf.pdf
PD- 95763IRF9510SPbF Lead-Free06/06/05Document Number: 91073 www.vishay.com1IRF9510SPbFDocument Number: 91073 www.vishay.com2IRF9510SPbFDocument Number: 91073 www.vishay.com3IRF9510SPbFDocument Number: 91073 www.vishay.com4IRF9510SPbFDocument Number: 91073 www.vishay.com5IRF9510SPbFDocument Number: 91073 www.vishay.com6IRF9510SPbFPeak Diode R
8.5. Size:197K vishay
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.6. Size:197K vishay
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
8.7. Size:172K vishay
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
8.8. Size:271K vishay
irf9510.pdf
IRF9510www.vishay.comVishay SiliconixPower MOSFETFEATURESS Dynamic dV/dt ratingTO-220AB Repetitive avalanche rated Available P-channelAvailableG 175 C operating temperature Fast switching Ease of parallelingS Simple drive requirementsDG D Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912P
8.9. Size:147K infineon
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
Datasheet: IRF9130
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History: PMBF4416
Keywords - IRF9512 MOSFET datasheet
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