IRF9522 MOSFET Datasheet: P-Ch, 100V, 5A. Full specification with pinout and replacement list

IRF9522 Specs and Replacement

Type Designator: IRF9522

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100(max) nS

Cossⓘ - Output Capacitance: 350(max) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

IRF9522 substitution

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IRF9522 datasheet

..1. Size:76K supertex
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8.2. Size:1203K international rectifier
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PD- 95412 IRF9520PbF Lead-Free 06/15/04 Document Number 91074 www.vishay.com 1 IRF9520PbF Document Number 91074 www.vishay.com 2 IRF9520PbF Document Number 91074 www.vishay.com 3 IRF9520PbF Document Number 91074 www.vishay.com 4 IRF9520PbF Document Number 91074 www.vishay.com 5 IRF9520PbF Document Number 91074 www.vishay.com 6 IRF9520PbF Document Number 91... See More ⇒

8.3. Size:160K international rectifier
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PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res... See More ⇒