2SK4006-01SJ Specs and Replacement
Type Designator: 2SK4006-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.58 Ohm
Package: TO263
2SK4006-01SJ substitution
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2SK4006-01SJ datasheet
2sk4006-01s-l-sj.pdf
SPECIFICATION Device Name Power MOSFET Type Name 2SK4006-01L,S,SJ Spec. No. MS5F6095 Date Apr.-11-2005 Fuji Electric Device Technology Co.,Ltd. Matsumoto Factory NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Apr.-11-'05 CHECKED Apr.-11-'05 MS5F6095 1 / 21 CHECKED Apr.-11-'05 H04-004-05 This datasheet has been downloaded from http //www.digchip.com... See More ⇒
2sk4002.pdf
2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit mm MAX Low drain-source ON-resistance RDS (ON) = 4.2 (typ.) High forward transfer admittance Yfs = 1.7 S (typ.) Low leakage current IDSS = 100 A (max)... See More ⇒
2sk4003.pdf
2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit mm MAX Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = ... See More ⇒
Detailed specifications: 2SK4212-ZK, 2SK4213A-ZK, 2SK4213-ZK, 2SK4178-S27-AY, 2SK4004-01MR, 2SK4005-01MR, 2SK4006-01L, 2SK4006-01S, IRFZ24N, 2SK1112, 2SK1113, 2SK1114, 2SK1115, 2SK1116, 2SK1124, 2SK113R, 2SK113O
Keywords - 2SK4006-01SJ MOSFET specs
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History: FTK80N10P | AP6900GSM-HF | 2SK1115 | SMC3415A | CJE3134K | MT7N65 | SMC2360
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