All MOSFET. 2SK2359-Z Datasheet

 

2SK2359-Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2359-Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 450 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO263

2SK2359-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2359-Z Datasheet (PDF)

3.1. 2sk2359_2sk2360.pdf Size:90K _update

2SK2359-Z
2SK2359-Z

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 1.3 ± 0.2 10.0 FEATURES • Low On-Resistance 4 2SK2359: RDS(o

4.1. 2sk2351.pdf Size:58K _update

2SK2359-Z
2SK2359-Z

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V

4.2. 2sk2350.pdf Size:417K _toshiba

2SK2359-Z
2SK2359-Z

2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.26 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 8 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 200 V) DS Enhancement-mo

4.3. 2sk2352.pdf Size:499K _toshiba2

2SK2359-Z
2SK2359-Z

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4.4. 2sk2357_2sk2358.pdf Size:55K _nec

2SK2359-Z
2SK2359-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 4.5 ±0.2 10.0 ±0.3 3.2 ±0.2 FEATURES 2.7 ±0.2 • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID =

Datasheet: 2SK113O , 2SK113Y , 2SK1159 , 2SK1163 , 2SK1164 , 2SK1169 , 2SK2351 , 2SK2359 , 2SK105 , 2SK2360 , 2SK2360-Z , 2SK2361 , 2SK2362 , 2SK2365 , 2SK2365-Z , 2SK2366 , 2SK2366-Z .

 


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