2SK2366-Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2366-Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO263
2SK2366-Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2366-Z
Datasheet (PDF)
..1. Size:90K nec
2sk2365-z 2sk2366-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2365/2SK2366SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications.10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance2SK2365: RDS(on)
8.1. Size:86K nec
2sk2369 2sk2370.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2369/2SK2370SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications. 3.0 0.2FEATURES4.7 MAX.15.7 MAX1.5 Low On-Resistance2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 1
8.2. Size:90K nec
2sk2359 2sk2360.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2359/2SK2360SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications. 10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance42SK2359: RDS(o
8.3. Size:99K nec
2sk2367 2sk2368.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2367/2SK2368SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor(in millimeter)designed for high voltage switching applications.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 Low On-Resistance2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)
8.4. Size:85K nec
2sk2361 2sk2362.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2361/2SK2362SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor(in millimeter)designed for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance42SK2361: RDS (on) = 0.9 (VGS = 10 V, ID = 5.0 A)
Datasheet: IRFP360LC
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