All MOSFET. 2SK3269 Datasheet

 

2SK3269 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3269

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 1220 nS

Drain-Source Capacitance (Cd): 570 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO263

2SK3269 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3269 Datasheet (PDF)

1.1. 2sk3269.pdf Size:45K _update

2SK3269

SMD Type MOSFET N-Channel Enhacement Mode MOSFET 2SK3269 TO-263 Unit: mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 4.5 V drive available Low on-state resistance RDS(on)1 =12m MAX. (VGS =10V, ID =18 A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.

1.2. 2sk3269-zj.pdf Size:941K _kexin

2SK3269
2SK3269

SMD Type MOSFET N-Channel MOSFET 2SK3269-ZJ ■ Features ● VDS (V) = 100V ● ID = 25 A (VGS = 10V) ● RDS(ON) < 100mΩ (VGS = 10V) D ● Low on-resistance, Low Qg ● High avalanche resistance G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 25 A Puls

4.1. 2sk3268.pdf Size:171K _update

2SK3269
2SK3269

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET ■ Features ■ Package • Avalanche energy capability guaranteed • Code • High-speed switching U-DL • Low ON resistance Ron • Pin Name • No secondary breakdown 1: Gate • Low-voltage drive 2: Drain • High electrostatic energy capability 3: Source

4.2. 2sk3265.pdf Size:732K _toshiba

2SK3269
2SK3269

2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.72 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V,

4.3. 2sk3264-01mr.pdf Size:882K _fuji

2SK3269
2SK3269

Datasheet: 2SK2366-Z , 2SK2371 , 2SK2372 , 2SK2386 , 2SK2388 , 2SK2389 , 2SK2402 , 2SK3268 , BS170 , 2SK3272-01SJ , 2SK3277 , 2SK3288ENTL , 2SK3294 , 2SK3295 , 2SK3298 , 2SK3298B , 2SK3299 .

 


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