All MOSFET. IRF9530NS Datasheet

 

IRF9530NS MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF9530NS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Maximum Drain Current |Id|: 14 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 58(max) nC
   Rise Time (tr): 58 nS
   Drain-Source Capacitance (Cd): 260 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
   Package: TO263

 IRF9530NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9530NS Datasheet (PDF)

 ..1. Size:173K  international rectifier
irf9530ns.pdf

IRF9530NS
IRF9530NS

PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 ..2. Size:761K  international rectifier
irf9530nspbf.pdf

IRF9530NS
IRF9530NS

PD- 95439IRF9530NSPbFIRF9530NLPbF Lead-Freewww.irf.com 104/26/05IRF9530NS/LPbF2 www.irf.comIRF9530NS/LPbFwww.irf.com 3IRF9530NS/LPbF4 www.irf.comIRF9530NS/LPbFwww.irf.com 5IRF9530NS/LPbF6 www.irf.comIRF9530NS/LPbFwww.irf.com 7IRF9530NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS

 ..3. Size:817K  infineon
irf9530nspbf irf9530nlpbf.pdf

IRF9530NS
IRF9530NS

IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In

 6.1. Size:225K  international rectifier
irf9530npbf.pdf

IRF9530NS
IRF9530NS

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

 6.2. Size:113K  international rectifier
irf9530n.pdf

IRF9530NS
IRF9530NS

PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

 6.3. Size:225K  infineon
irf9530npbf.pdf

IRF9530NS
IRF9530NS

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

 6.4. Size:1531K  cn vbsemi
irf9530npbf.pdf

IRF9530NS
IRF9530NS

IRF9530NPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Swi

 6.5. Size:241K  inchange semiconductor
irf9530n.pdf

IRF9530NS
IRF9530NS

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530NFEATURESStatic drain-source on-resistance:RDS(on)0.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia

Datasheet: IRF9520NS , IRF9521 , IRF9522 , IRF9523 , IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , 50N06 , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 .

 

 
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