2SK796 Specs and Replacement
Type Designator: 2SK796
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 55 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TOP3F
2SK796 substitution
- MOSFET ⓘ Cross-Reference Search
2SK796 datasheet
2sk796.pdf
isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
2sk796a.pdf
isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒
Detailed specifications: 2SK888, 2SK889, 2SK890, 2SK891, 2SK892, 2SK893, 2SK894, 2SK897-M, IRF520, 2SK796A, 2SK807, 2SK818, 2SK818A, 2SK951-M, 2SK956-01R, 2SK957-M, 2SK957-MR
Keywords - 2SK796 MOSFET specs
2SK796 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRLR3110Z | EM6M2 | 2SJ599-Z
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