2SK818A Datasheet and Replacement
Type Designator: 2SK818A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 60 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO247AD
2SK818A substitution
2SK818A Datasheet (PDF)
2sk818a.pdf

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk818.pdf

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Datasheet: 2SK892 , 2SK893 , 2SK894 , 2SK897-M , 2SK796 , 2SK796A , 2SK807 , 2SK818 , IRF830 , 2SK951-M , 2SK956-01R , 2SK957-M , 2SK957-MR , 2SK1011-01 , 2SK1012-01 , 2SK1014-01 , 2SK1015 .
History: IPT026N10N5 | NX7002BK
Keywords - 2SK818A MOSFET datasheet
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History: IPT026N10N5 | NX7002BK



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