2SK1016-01 PDF and Equivalents Search

 

2SK1016-01 Specs and Replacement

Type Designator: 2SK1016-01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO3P

2SK1016-01 substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK1016-01 datasheet

 ..1. Size:176K  fuji
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2SK1016-01

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 7.2. Size:203K  inchange semiconductor
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2SK1016-01

isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS... See More ⇒

 8.1. Size:244K  1
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2SK1016-01

FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and... See More ⇒

Detailed specifications: 2SK956-01R, 2SK957-M, 2SK957-MR, 2SK1011-01, 2SK1012-01, 2SK1014-01, 2SK1015, 2SK1015-01, IRFZ46N, 2SK1017-01, 2SK1018, 2SK1020, 2SK1021, 2SK1022, 2SK1023-01, 2SK1024-01, 2SK2023-01

Keywords - 2SK1016-01 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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