All MOSFET. 2SK2149 Datasheet

 

2SK2149 Datasheet and Replacement


   Type Designator: 2SK2149
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3PI
 

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2SK2149 Datasheet (PDF)

 ..1. Size:61K  inchange semiconductor
2sk2149.pdf pdf_icon

2SK2149

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2149 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500

 8.1. Size:123K  1
2sk2141.pdf pdf_icon

2SK2149

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2141SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2141 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-state ResistanceRDS(on) = 1.1 MAX. (VGS = 10 V, ID = 3

 8.2. Size:134K  1
2sk2140 2sk2140-z.pdf pdf_icon

2SK2149

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2140, 2SK2140-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 1.5 MAX.

 8.3. Size:315K  toshiba
2sk2145.pdf pdf_icon

2SK2149

2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications Unit: mm Including two devices in SM5 (super mini type with 5 leads.) High |Y |: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 k

Datasheet: 2SK1024-01 , 2SK2023-01 , 2SK2027-01 , 2SK2100-01MR , 2SK2133-Z , 2SK2134-Z , 2SK2146 , 2SK2147-01R , BS170 , 2SK2150 , 2SK2157C , 2SK2272-01R , 2SK2315 , 2SK3133L , 2SK3133S , 2SK3230 , 2SK325 .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - 2SK2149 MOSFET datasheet

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