Справочник MOSFET. 2SK2149

 

2SK2149 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2149
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TO3PI

 Аналог (замена) для 2SK2149

 

 

2SK2149 Datasheet (PDF)

 ..1. Size:61K  inchange semiconductor
2sk2149.pdf

2SK2149
2SK2149

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2149 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500

 8.1. Size:123K  1
2sk2141.pdf

2SK2149
2SK2149

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2141SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2141 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-state ResistanceRDS(on) = 1.1 MAX. (VGS = 10 V, ID = 3

 8.2. Size:134K  1
2sk2140 2sk2140-z.pdf

2SK2149
2SK2149

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2140, 2SK2140-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 1.5 MAX.

 8.3. Size:315K  toshiba
2sk2145.pdf

2SK2149
2SK2149

2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications Unit: mm Including two devices in SM5 (super mini type with 5 leads.) High |Y |: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 k

 8.4. Size:71K  renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

2SK2149
2SK2149

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:177K  fuji
2sk2147-01r.pdf

2SK2149
2SK2149

 8.6. Size:193K  fuji
2sk2148-01.pdf

2SK2149
2SK2149

N-channel MOS-FET2SK2148-01FAP-IIA Series 600V 0,75 12A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi

 8.7. Size:196K  fuji
2sk2148.pdf

2SK2149
2SK2149

 8.8. Size:28K  hitachi
2sk2144.pdf

2SK2149
2SK2149

2SK2144Silicon N-Channel MOS FETADE-208-1349 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converterOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2144Absolute Maximum Ratings (Ta = 25

 8.9. Size:33K  hitachi
2sk213 2sk214 2sk215 2sk216.pdf

2SK2149
2SK2149

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

 8.10. Size:213K  inchange semiconductor
2sk2144.pdf

2SK2149
2SK2149

isc N-Channel MOSFET Transistor 2SK2144DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.11. Size:222K  inchange semiconductor
2sk2147-01.pdf

2SK2149
2SK2149

isc N-Channel MOSFET Transistor 2SK2147-01DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM

 8.12. Size:54K  inchange semiconductor
2sk2146.pdf

2SK2149
2SK2149

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2146 DESCRIPTION Drain Current ID= 2A@ TC=25 Drain Source Voltage- : VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 250 V

 8.13. Size:222K  inchange semiconductor
2sk2148-01.pdf

2SK2149
2SK2149

isc N-Channel MOSFET Transistor 2SK2148-01DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM

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