All MOSFET. IRF9540NS Datasheet

 

IRF9540NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9540NS

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 64.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.117 Ohm

Package: D2PAK

IRF9540NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9540NS Datasheet (PDF)

1.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

IRF9540NS
IRF9540NS

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150°C Operating Temperature l Fast Switching RDS(on) = 117mΩ l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150

1.2. irf9540ns.pdf Size:286K _international_rectifier

IRF9540NS
IRF9540NS

PD - 91483D IRF9540NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

 2.1. irf9540npbf.pdf Size:922K _upd-mosfet

IRF9540NS
IRF9540NS

PD - 94790A IRF9540NPbF • Lead-Free www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185)

2.2. irf9540n.pdf Size:125K _international_rectifier

IRF9540NS
IRF9540NS

PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

Datasheet: IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL , IRF630 , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S , IRF9611 , IRF9612 , IRF9613 .

 

 
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