2SK3305 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3305
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO263
2SK3305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3305 Datasheet (PDF)
2sk3305-s 2sk3305 2sk3305-zj.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3305SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3305 TO-220ABdesigned for high voltage applications such as switching power2SK3305-S TO-262supply, AC adapter.
2sk3305.pdf
SMD Type MOSFETMOS Field Effect Transistor2SK3305TO-263Unit: mm+0.2Features 4.57-0.2+0.11.27-0.1Low gate chargeQG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistance+0.1RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A)0.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.
2sk3305.pdf
isc N-Channel MOSFET Transistor 2SK3305FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3305-zj.pdf
SMD Type MOSFETN-Channel MOSFET2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating: 30 V Avalanche capability ratingsDrain (D)BodyGate (G) DiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 30 Con
2sk3305-zj.pdf
isc N-Channel MOSFET Transistor 2SK3305-ZJFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3305-s.pdf
isc N-Channel MOSFET Transistor 2SK3305-SFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NDT2N60P
History: NDT2N60P
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