Справочник MOSFET. 2SK3305

 

2SK3305 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3305
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO263

 Аналог (замена) для 2SK3305

 

 

2SK3305 Datasheet (PDF)

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2SK3305 2SK3305

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3305SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3305 TO-220ABdesigned for high voltage applications such as switching power2SK3305-S TO-262supply, AC adapter.

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2SK3305

SMD Type MOSFETMOS Field Effect Transistor2SK3305TO-263Unit: mm+0.2Features 4.57-0.2+0.11.27-0.1Low gate chargeQG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistance+0.1RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A)0.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.

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2SK3305 2SK3305

isc N-Channel MOSFET Transistor 2SK3305FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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 2sk3305-zj.pdf

2SK3305 2SK3305

SMD Type MOSFETN-Channel MOSFET2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating: 30 V Avalanche capability ratingsDrain (D)BodyGate (G) DiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 30 Con

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2SK3305 2SK3305

isc N-Channel MOSFET Transistor 2SK3305-ZJFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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 2sk3305-s.pdf

2SK3305 2SK3305

isc N-Channel MOSFET Transistor 2SK3305-SFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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History: IXFP3N80 | IRL1004L

 

 
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