2SK3357 Specs and Replacement
Type Designator: 2SK3357
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 75
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 1350
nS
Cossⓘ -
Output Capacitance: 1500
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058
Ohm
Package:
TO3P
-
MOSFET ⓘ Cross-Reference Search
2SK3357 datasheet
..1. Size:260K renesas
2sk3357.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
..2. Size:287K inchange semiconductor
2sk3357.pdf 
isc N-Channel MOSFET Transistor 2SK3357 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.1. Size:38K 1
2sk3352.pdf 
Ordering number ENN8125 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3352 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ... See More ⇒
8.2. Size:214K renesas
2sk3355.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.3. Size:214K renesas
2sk3355-s-z-zj.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.4. Size:214K renesas
2sk3354-s-z-zj.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.5. Size:42K nec
2sk3354.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3354 TO-220AB 2SK3354-S TO-262 FEATURES 2SK3354-Z TO-220SMD Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS =... See More ⇒
8.6. Size:39K nec
2sk3353-s-z.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3353 TO-220AB 2SK3353-S TO-262 FEATURES 2SK3353-Z TO-220SMD Super low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS ... See More ⇒
8.7. Size:289K inchange semiconductor
2sk3355.pdf 
isc N-Channel MOSFET Transistor 2SK3355 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.8. Size:357K inchange semiconductor
2sk3353-z.pdf 
isc N-Channel MOSFET Transistor 2SK3353-Z FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.9. Size:356K inchange semiconductor
2sk3352b.pdf 
isc P-Channel MOSFET Transistor 2SK3352B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.10. Size:357K inchange semiconductor
2sk3354-z.pdf 
isc N-Channel MOSFET Transistor 2SK3354-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.11. Size:283K inchange semiconductor
2sk3355-s.pdf 
isc N-Channel MOSFET Transistor 2SK3355-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.12. Size:357K inchange semiconductor
2sk3355-zj.pdf 
isc N-Channel MOSFET Transistor 2SK3355-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.13. Size:289K inchange semiconductor
2sk3354.pdf 
isc N-Channel MOSFET Transistor 2SK3354 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.14. Size:283K inchange semiconductor
2sk3353-s.pdf 
isc N-Channel MOSFET Transistor 2SK3353-S FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.15. Size:283K inchange semiconductor
2sk3354-s.pdf 
isc N-Channel MOSFET Transistor 2SK3354-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.16. Size:357K inchange semiconductor
2sk3355-z.pdf 
isc N-Channel MOSFET Transistor 2SK3355-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.17. Size:340K inchange semiconductor
2sk3352k.pdf 
isc P-Channel MOSFET Transistor 2SK3352K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.18. Size:289K inchange semiconductor
2sk3353.pdf 
isc N-Channel MOSFET Transistor 2SK3353 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
Detailed specifications: 2SK3353
, 2SK3353-S
, 2SK3353-Z
, 2SK3354-S
, 2SK3354-Z
, 2SK3354-ZJ
, 2SK3355
, 2SK3355-Z
, IRFP250N
, 2SK3362-01
, 2SK3363-01
, 2SK3364-01
, 2SK4066-1E
, 2SK4066-DL-1E
, 2SK4066-DL-E
, 2SK4066-E
, 2SK4069-S27-AY
.
Keywords - 2SK3357 MOSFET specs
2SK3357 cross reference
2SK3357 equivalent finder
2SK3357 pdf lookup
2SK3357 substitution
2SK3357 replacement
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