All MOSFET. 2SK3357 Datasheet

 

2SK3357 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3357

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 170 nC

Rise Time (tr): 1350 nS

Drain-Source Capacitance (Cd): 1500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm

Package: TO3P

2SK3357 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3357 Datasheet (PDF)

1.1. 2sk3357.pdf Size:260K _update

2SK3357
2SK3357

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. 2sk3355.pdf Size:214K _update

2SK3357
2SK3357

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk3353-s-z.pdf Size:39K _update

2SK3357
2SK3357

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3353 TO-220AB 2SK3353-S TO-262 FEATURES 2SK3353-Z TO-220SMD • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS

 4.3. 2sk3354-s-z-zj.pdf Size:214K _update

2SK3357
2SK3357

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3355-s-z-zj.pdf Size:214K _update

2SK3357
2SK3357

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. 2sk3354.pdf Size:42K _nec

2SK3357
2SK3357

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3354 TO-220AB 2SK3354-S TO-262 FEATURES 2SK3354-Z TO-220SMD • Super low on-state resistance: RDS(on)1 = 8.0 mΩ MAX. (VGS =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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