All MOSFET. IRF9543 Datasheet

 

IRF9543 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF9543
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220

 IRF9543 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9543 Datasheet (PDF)

 ..1. Size:352K  no
irf9540 irf9541 irf9542 irf9543.pdf

IRF9543
IRF9543

WWW.ALLDATASHEET.COM Copyright Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com

 8.1. Size:922K  international rectifier
irf9540npbf.pdf

IRF9543
IRF9543

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

 8.2. Size:823K  international rectifier
auirf9540n.pdf

IRF9543
IRF9543

PD - 97626AUTOMOTIVE GRADEAUIRF9540NFeaturesl Advanced Planar TechnologyDl Dynamic dV/dT RatingV(BR)DSS-100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.0.117Gl Fully Avalanche Ratedl Repetitive Avalanche AllowedID-23ASup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSSpecifically designed for Automotive ap

 8.3. Size:321K  international rectifier
irf9540s.pdf

IRF9543
IRF9543

PD - 95699IRF9540SPbF Lead-Free9/10/04Document Number: 91079 www.vishay.com1IRF9540SPbFDocument Number: 91079 www.vishay.com2IRF9540SPbFDocument Number: 91079 www.vishay.com3IRF9540SPbFDocument Number: 91079 www.vishay.com4IRF9540SPbFDocument Number: 91079 www.vishay.com5IRF9540SPbFDocument Number: 91079 www.vishay.com6IRF9540SPbFPeak Diode R

 8.4. Size:326K  international rectifier
irf9540nlpbf irf9540nspbf.pdf

IRF9543
IRF9543

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

 8.5. Size:926K  international rectifier
irf9540.pdf

IRF9543
IRF9543

PD - 94884IRF9540PbF Lead-Free12/11/03Document Number: 91078 www.vishay.com1IRF9540PbFDocument Number: 91078 www.vishay.com2IRF9540PbFDocument Number: 91078 www.vishay.com3IRF9540PbFDocument Number: 91078 www.vishay.com4IRF9540PbFDocument Number: 91078 www.vishay.com5IRF9540PbFDocument Number: 91078 www.vishay.com6IRF9540PbFTO-220AB Package O

 8.6. Size:125K  international rectifier
irf9540n.pdf

IRF9543
IRF9543

PD - 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 8.7. Size:286K  international rectifier
irf9540ns.pdf

IRF9543
IRF9543

PD - 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t

 8.8. Size:99K  fairchild semi
irf9540 rf1s9540sm.pdf

IRF9543
IRF9543

IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 8.9. Size:378K  samsung
irfp9140-43 irf9540-43.pdf

IRF9543
IRF9543

 8.10. Size:197K  vishay
irf9540s irf9540spbf sihf9540s.pdf

IRF9543
IRF9543

IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast

 8.11. Size:172K  vishay
irf9540s sihf9540s.pdf

IRF9543
IRF9543

IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast

 8.12. Size:202K  vishay
irf9540 sihf9540.pdf

IRF9543
IRF9543

IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir

 8.13. Size:203K  vishay
irf9540pbf sihf9540.pdf

IRF9543
IRF9543

IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir

 8.14. Size:922K  infineon
irf9540npbf.pdf

IRF9543
IRF9543

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

 8.15. Size:326K  infineon
irf9540nspbf irf9540nlpbf.pdf

IRF9543
IRF9543

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

 8.16. Size:1188K  cn evvo
irf9540.pdf

IRF9543
IRF9543

IRF9540P-Channel MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology anddesign to provide excellent R with low gate charge.DS(on)It can be used in a wide variety of applications.Features1) V =-100V,I =-20A,R

 8.17. Size:273K  inchange semiconductor
irf9540n.pdf

IRF9543
IRF9543

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr

Datasheet: IRF9532 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRFP260N , IRF9610 , IRF9610S , IRF9611 , IRF9612 , IRF9613 , IRF9620 , IRF9620S , IRF9621 .

 

 
Back to Top