All MOSFET. 2SK4066-E Datasheet

 

2SK4066-E MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK4066-E
   Marking Code: K4066
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 220 nC
   trⓘ - Rise Time: 630 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO263 TO262

 2SK4066-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK4066-E Datasheet (PDF)

 6.1. Size:52K  sanyo
 2sk4066-dl-e.pdf

2SK4066-E 2SK4066-E

Ordering number : ENA0225A 2SK4066SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures Low ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-

 6.2. Size:285K  onsemi
 2sk4066-1e 2sk4066-dl-1e.pdf

2SK4066-E 2SK4066-E

Ordering number : ENA0225C2SK4066N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 4.7m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS

 7.1. Size:377K  sanyo
 2sk4066.pdf

2SK4066-E 2SK4066-E

2SK4066Ordering number : ENA0225BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60

 7.2. Size:357K  inchange semiconductor
 2sk4066b.pdf

2SK4066-E 2SK4066-E

isc N-Channel MOSFET Transistor 2SK4066BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.3. Size:283K  inchange semiconductor
 2sk4066k.pdf

2SK4066-E 2SK4066-E

isc N-Channel MOSFET Transistor 2SK4066KFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SQM110N10-09

 

 
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