All MOSFET. 2SK765 Datasheet

 

2SK765 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK765
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 70 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TOP3F

 2SK765 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK765 Datasheet (PDF)

 ..1. Size:235K  inchange semiconductor
 2sk765.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK765DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conv

 0.1. Size:145K  panasonic
 2sk765-a.pdf

2SK765 2SK765

"2SK765""2SK765"

 0.2. Size:242K  inchange semiconductor
 2sk765a.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK765ADESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, con

 9.1. Size:64K  panasonic
 2sk764 2sk764a.pdf

2SK765

 9.2. Size:68K  panasonic
 2sk762 2sk762a.pdf

2SK765

 9.3. Size:237K  inchange semiconductor
 2sk768.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK768DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.4. Size:234K  inchange semiconductor
 2sk767.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK767DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver

 9.5. Size:234K  inchange semiconductor
 2sk769.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK769DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.6. Size:237K  inchange semiconductor
 2sk764a.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK764ADESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conv

 9.7. Size:234K  inchange semiconductor
 2sk762.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK762DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver

 9.8. Size:234K  inchange semiconductor
 2sk766.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK766DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver

 9.9. Size:237K  inchange semiconductor
 2sk764.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK764DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.10. Size:235K  inchange semiconductor
 2sk763.pdf

2SK765 2SK765

isc N-Channel MOSFET Transistor 2SK763DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLML2502GPBF | HAT1041T | SM9992DSQG

 

 
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