2SK490
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK490
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO3P
2SK490
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK490
Datasheet (PDF)
..1. Size:3846K nec
2sk490.pdf
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9.1. Size:24K hitachi
2sk494.pdf
2SK494Silicon N-Channel Junction FETApplicationLow frequency / High frequency amplifierOutlineSPAK1. Drain122. Gate33. Source2SK494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 22 VGate to source voltage VGSO 22 VDrain current ID 100 mAGate current IG 10 mAChannel power dissipation Pch 300 mWChannel temperatu
9.2. Size:206K isahaya
2sk492.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
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