IRF9630 Datasheet and Replacement
Type Designator: IRF9630
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220AB
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IRF9630 Datasheet (PDF)
irf9630pbf.pdf

PD - 94958IRF9630PbF Lead-Free01/29/04Document Number: 91084 www.vishay.com1IRF9630PbFDocument Number: 91084 www.vishay.com2IRF9630PbFDocument Number: 91084 www.vishay.com3IRF9630PbFDocument Number: 91084 www.vishay.com4IRF9630PbFDocument Number: 91084 www.vishay.com5IRF9630PbFDocument Number: 91084 www.vishay.com6IRF9630PbFTO-220AB Package O
irf9630 rf1s9630sm.pdf

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a
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Datasheet: IRF9611 , IRF9612 , IRF9613 , IRF9620 , IRF9620S , IRF9621 , IRF9622 , IRF9623 , STP75NF75 , IRF9630S , IRF9631 , IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 .
Keywords - IRF9630 MOSFET datasheet
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History: IRF634 | IRF453



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