All MOSFET. IRF9630 Datasheet

 

IRF9630 Datasheet and Replacement


   Type Designator: IRF9630
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29(max) nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220AB
 

 IRF9630 substitution

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IRF9630 Datasheet (PDF)

 ..1. Size:175K  international rectifier
 irf9630.pdf pdf_icon

IRF9630

 ..2. Size:2142K  international rectifier
 irf9630pbf.pdf pdf_icon

IRF9630

PD - 94958IRF9630PbF Lead-Free01/29/04Document Number: 91084 www.vishay.com1IRF9630PbFDocument Number: 91084 www.vishay.com2IRF9630PbFDocument Number: 91084 www.vishay.com3IRF9630PbFDocument Number: 91084 www.vishay.com4IRF9630PbFDocument Number: 91084 www.vishay.com5IRF9630PbFDocument Number: 91084 www.vishay.com6IRF9630PbFTO-220AB Package O

 ..3. Size:103K  fairchild semi
 irf9630 rf1s9630sm.pdf pdf_icon

IRF9630

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

 ..4. Size:504K  samsung
 irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf pdf_icon

IRF9630

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Datasheet: IRF9611 , IRF9612 , IRF9613 , IRF9620 , IRF9620S , IRF9621 , IRF9622 , IRF9623 , 2SK3878 , IRF9630S , IRF9631 , IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 .

Keywords - IRF9630 MOSFET datasheet

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