2SK672
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK672
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO220AB
2SK672
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK672
Datasheet (PDF)
..1. Size:61K inchange semiconductor
2sk672.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK672 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RA
9.2. Size:70K toshiba
2sk674.pdf
"2SK674"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK674"Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.4. Size:235K inchange semiconductor
2sk678.pdf
isc N-Channel MOSFET Transistor 2SK678DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
Datasheet: WPB4002
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