2SK678 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK678
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 70 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3PL
2SK678 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK678 Datasheet (PDF)
2sk678.pdf
isc N-Channel MOSFET Transistor 2SK678DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
2sk674.pdf
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2sk672.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK672 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P1604ETF | 2N3824 | 2N6963 | FCPF11N60 | 2N6656 | 2N4392 | 2N4391