2SK682 Specs and Replacement

Type Designator: 2SK682

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO247AD

2SK682 substitution

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2SK682 datasheet

 ..1. Size:141K  hitachi
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2SK682

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 ..2. Size:236K  inchange semiconductor
 2sk682.pdf pdf_icon

2SK682

isc N-Channel MOSFET Transistor 2SK682 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS low on resistance High speed switching Low drive current No secondary breakdown Suitable f... See More ⇒

 9.1. Size:308K  1
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2SK682

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 9.2. Size:444K  1
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2SK682

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Detailed specifications: 2SK3433-ZJ, 2SK643, 2SK644, 2SK646, 2SK672, 2SK673, 2SK674, 2SK678, 5N60, 2SK683, 2SK684, 2SK1483C, 2SK1493-Z, 2SK1494-Z, 2SK1495-Z, 2SK1496-Z, 2SK1503

Keywords - 2SK682 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.