2SK1379
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1379
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 2800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
TO3PN
2SK1379
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1379
Datasheet (PDF)
..1. Size:75K no
2sk1379.pdf
Free Datasheet http://www.datasheet-pdf.com/Free Datasheet http://www.datasheet-pdf.com/
8.2. Size:33K panasonic
2sk1374.pdf
Silicon MOS FETs (Small Signal) 2SK13742SK1374Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage V 50 VDS1 : GateGate-Source voltage
8.4. Size:56K inchange semiconductor
2sk1377.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1377 DESCRIPTION Drain Current ID=5.5A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V
8.5. Size:200K inchange semiconductor
2sk1378.pdf
isc N-Channel MOSFET Transistor 2SK1378DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai
8.6. Size:202K inchange semiconductor
2sk1373.pdf
isc N-Channel MOSFET Transistor 2SK1373DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =550V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
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