2SK1379 - Даташиты. Аналоги. Основные параметры

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Silicon MOS FETs (Small Signal) 2SK1374 2SK1374 Silicon N-Channel MOS Unit mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter Symbol Rating Unit Drain-Source voltage V 50 V DS 1 Gate Gate-Source voltage

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1377 DESCRIPTION Drain Current ID=5.5A@ TC=25 Drain Source Voltage- VDSS=400V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V

isc N-Channel MOSFET Transistor 2SK1378 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai

isc N-Channel MOSFET Transistor 2SK1373 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =550V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)