2SK1379 - Даташиты. Аналоги. Основные параметры

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Silicon MOS FETs (Small Signal) 2SK13742SK1374Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage V 50 VDS1 : GateGate-Source voltage

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1377 DESCRIPTION Drain Current ID=5.5A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V

isc N-Channel MOSFET Transistor 2SK1378DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

isc N-Channel MOSFET Transistor 2SK1373DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =550V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)