All MOSFET. 2SK2690-01 Datasheet

 

2SK2690-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2690-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO3P

 2SK2690-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2690-01 Datasheet (PDF)

 ..1. Size:226K  fuji
2sk2690-01.pdf

2SK2690-01 2SK2690-01

FUJI POWER MOSFET2SK2690-01200511N-CHANNEL SILICON POWER MOSFETFAP-IIIB SeriesOutline Drawings [mm]TO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratingsDrain(

 8.1. Size:418K  toshiba
2sk2698.pdf

2SK2690-01 2SK2690-01

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.35 (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10

 8.2. Size:419K  toshiba
2sk2699.pdf

2SK2690-01 2SK2690-01

2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2699 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.5 (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS

 8.3. Size:281K  fuji
2sk2691-01r.pdf

2SK2690-01 2SK2690-01

2SK2691-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top