2SK2715TL Datasheet and Replacement
Type Designator: 2SK2715TL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 58 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO252
2SK2715TL substitution
2SK2715TL Datasheet (PDF)
2sk2715tl.pdf

TransistorsSwitching (500V, 2A)2SK2715FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificati
2sk2715.pdf

TransistorsSwitching (500V, 2A)2SK2715FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificati
2sk2715.pdf

2SK2715www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS di
Datasheet: 2SK1385-01R , 2SK1386-01 , 2SK1548-01MR , 2SK1547-01MR , 2SK2624ALS , 2SK2689-01MR , 2SK2690-01 , 2SK2691-01R , IRF9540 , 2SK2725 , 2SK2726 , 2SK2727 , 2SK2729 , 2SK2730 , 2SK3468-01 , 2SK3474-01 , 2SK3479 .
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History: STP6625 | SVF840MJ



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