2SK2715TL
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2715TL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 58
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
TO252
2SK2715TL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2715TL
Datasheet (PDF)
..1. Size:145K rohm
2sk2715tl.pdf
TransistorsSwitching (500V, 2A)2SK2715FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificati
7.1. Size:138K rohm
2sk2715.pdf
TransistorsSwitching (500V, 2A)2SK2715FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificati
7.3. Size:925K cn vbsemi
2sk2715.pdf
2SK2715www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS di
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