All MOSFET. 2SK3479 Datasheet

 

2SK3479 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3479

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 83 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm

Package: TO220AB

2SK3479 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3479 Datasheet (PDF)

1.1. 2sk3479-s-z-zj.pdf Size:205K _update

2SK3479
2SK3479

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. 2sk3474-01.pdf Size:100K _update

2SK3479
2SK3479

FUJI POWER MOSFET200303 2SK3474-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema

4.2. 2sk3472.pdf Size:191K _toshiba

2SK3479
2SK3479

2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOS V) 2SK3472 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 m? (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R

 4.3. 2sk3475.pdf Size:157K _toshiba

2SK3479
2SK3479

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this doc

4.4. 2sk3471.pdf Size:154K _toshiba

2SK3479
2SK3479

2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 10 ? (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A

 4.5. 2sk3473.pdf Size:230K _toshiba

2SK3479
2SK3479

2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.6. 2sk3476.pdf Size:166K _toshiba

2SK3479
2SK3479

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this doc

Datasheet: 2SK2715TL , 2SK2725 , 2SK2726 , 2SK2727 , 2SK2729 , 2SK2730 , 2SK3468-01 , 2SK3474-01 , IRFP064N , 2SK3479-S , 2SK3479-Z , 2SK3479-ZJ , 2SK349 , 2SK350 , 2SK3501-01 , 2SK3504-01 , 2SK3889-01L .

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