2SK1527-E1-E Specs and Replacement
Type Designator: 2SK1527-E1-E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 175 nS
Cossⓘ -
Output Capacitance: 1430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO264
2SK1527-E1-E substitution
- MOSFET ⓘ Cross-Reference Search
2SK1527-E1-E datasheet
..1. Size:142K renesas
2sk1527-e1-e.pdf 
Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100 500V - 40A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 20 A, VGS = 10 V, Ta = 25 C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZC-A (Package na... See More ⇒
8.1. Size:83K 1
2sk1521 2sk1522.pdf
2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod... See More ⇒
8.2. Size:287K toshiba
2sk1529.pdf
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit mm High breakdown voltage VDSS = 180V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS 20 V Drai... See More ⇒
8.3. Size:83K renesas
2sk1521.pdf
2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod... See More ⇒
8.4. Size:143K renesas
2sk1522-e1-e.pdf
Preliminary Datasheet 2SK1522-E1-E R07DS1195EJ0200 500V - 50A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC conver... See More ⇒
8.5. Size:83K renesas
2sk1526.pdf
2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name T... See More ⇒
8.6. Size:96K renesas
2sk1528.pdf
2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AE-A RENESAS Pac... See More ⇒
8.7. Size:117K renesas
rej03g0949 2sk1521ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.8. Size:108K renesas
rej03g0951 2sk1528lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.9. Size:83K renesas
2sk1519 2sk1520.pdf
2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod... See More ⇒
8.10. Size:160K renesas
2sk1521-e1-e.pdf
Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300 450V - 50A - MOS FET Rev.3.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.08 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC convert... See More ⇒
8.11. Size:116K renesas
rej03g0950 2sk1526ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.13. Size:88K interfet
2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf
Databook.fxp 1/13/99 2 09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V 50 20 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS ( 20 V) ( 10 V) ( 30 V) (... See More ⇒
8.17. Size:215K inchange semiconductor
2sk1520.pdf
isc N-Channel MOSFET Transistor 2SK1520 ESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒
8.18. Size:211K inchange semiconductor
2sk1529.pdf
isc N-Channel MOSFET Transistor 2SK1529 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 180V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 180 V... See More ⇒
8.19. Size:215K inchange semiconductor
2sk1526.pdf
isc N-Channel MOSFET Transistor 2SK1526 ESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒
Detailed specifications: 2SK872, 2SK873, 2SK152, 2SK1521-E1-E, 2SK1522-E1-E, 2SK1523, 2SK1524, 2SK1525, RFP50N06, 2SK1534, 2SK1535, 2SK1536, 2SK1538, 2SK1539, 2SK1542, 2SK1929, 2SK1941-01R
Keywords - 2SK1527-E1-E MOSFET specs
2SK1527-E1-E cross reference
2SK1527-E1-E equivalent finder
2SK1527-E1-E pdf lookup
2SK1527-E1-E substitution
2SK1527-E1-E replacement
Need a MOSFET replacement?
Our guide shows you how to find a perfect substitute by comparing key parameters and specs
