2SK1527-E1-E. Аналоги и основные параметры
Наименование производителя: 2SK1527-E1-E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 175 ns
Cossⓘ - Выходная емкость: 1430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO264
Аналог (замена) для 2SK1527-E1-E
- подборⓘ MOSFET транзистора по параметрам
2SK1527-E1-E даташит
..1. Size:142K renesas
2sk1527-e1-e.pdf 
Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100 500V - 40A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 20 A, VGS = 10 V, Ta = 25 C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZC-A (Package na
8.1. Size:83K 1
2sk1521 2sk1522.pdf 
2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.2. Size:287K toshiba
2sk1529.pdf 
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit mm High breakdown voltage VDSS = 180V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS 20 V Drai
8.3. Size:83K renesas
2sk1521.pdf 
2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.4. Size:143K renesas
2sk1522-e1-e.pdf 
Preliminary Datasheet 2SK1522-E1-E R07DS1195EJ0200 500V - 50A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC conver
8.5. Size:83K renesas
2sk1526.pdf 
2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name T
8.6. Size:96K renesas
2sk1528.pdf 
2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AE-A RENESAS Pac
8.7. Size:117K renesas
rej03g0949 2sk1521ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:108K renesas
rej03g0951 2sk1528lsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:83K renesas
2sk1519 2sk1520.pdf 
2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.10. Size:160K renesas
2sk1521-e1-e.pdf 
Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300 450V - 50A - MOS FET Rev.3.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.08 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC convert
8.11. Size:116K renesas
rej03g0950 2sk1526ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.13. Size:88K interfet
2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf 
Databook.fxp 1/13/99 2 09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V 50 20 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS ( 20 V) ( 10 V) ( 30 V) (
8.17. Size:215K inchange semiconductor
2sk1520.pdf 
isc N-Channel MOSFET Transistor 2SK1520 ESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.18. Size:211K inchange semiconductor
2sk1529.pdf 
isc N-Channel MOSFET Transistor 2SK1529 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 180V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 180 V
8.19. Size:215K inchange semiconductor
2sk1526.pdf 
isc N-Channel MOSFET Transistor 2SK1526 ESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
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