2SK1536 Datasheet and Replacement
Type Designator: 2SK1536
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 45 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO247
2SK1536 substitution
2SK1536 Datasheet (PDF)
2sk1530.pdf
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mmHigh-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 200 VGate-source voltage VGSS 20 V
Datasheet: 2SK1521-E1-E , 2SK1522-E1-E , 2SK1523 , 2SK1524 , 2SK1525 , 2SK1527-E1-E , 2SK1534 , 2SK1535 , 75N75 , 2SK1538 , 2SK1539 , 2SK1542 , 2SK1929 , 2SK1941-01R , 2SK1942-01 , 2SK1809 , 2SK1944-01 .
History: GP1M003A080XG | TPCA8019-H | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
Keywords - 2SK1536 MOSFET datasheet
2SK1536 cross reference
2SK1536 equivalent finder
2SK1536 lookup
2SK1536 substitution
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History: GP1M003A080XG | TPCA8019-H | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
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