IRF9Z14S MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9Z14S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6.7 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 12 nC
Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
Package: D2PAK
IRF9Z14S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9Z14S Datasheet (PDF)
1.1. irf9z14spbf.pdf Size:194K _upd-mosfet
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.50 • Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) • 175 °C Operating Temperature Qgs (nC) 3.8
1.2. irf9z14spbf irf9z14lpbf.pdf Size:1222K _international_rectifier
PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free 06/08/05 Document Number: 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 6 IRF9Z14
1.3. irf9z14s.pdf Size:361K _international_rectifier
PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating Temperature RDS(on) = 0.50? Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr
1.4. irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf Size:169K _vishay
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8 Fast Switchin
Datasheet: IRF9641 , IRF9642 , IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRFP4332 , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 , IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S .



LIST
Last Update
MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |