All MOSFET. IRF9Z20 Datasheet

 

IRF9Z20 Datasheet and Replacement


   Type Designator: IRF9Z20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220AB
 

 IRF9Z20 substitution

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IRF9Z20 Datasheet (PDF)

 ..1. Size:415K  1
irf9z20 irf9z22.pdf pdf_icon

IRF9Z20

 ..2. Size:1215K  vishay
irf9z20pbf sihf9z20.pdf pdf_icon

IRF9Z20

IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

 ..3. Size:1213K  vishay
irf9z20 sihf9z20.pdf pdf_icon

IRF9Z20

IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

 8.1. Size:97K  1
irf9z25.pdf pdf_icon

IRF9Z20

Datasheet: IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF1407 , IRF9Z22 , IRF9Z24 , IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 .

Keywords - IRF9Z20 MOSFET datasheet

 IRF9Z20 cross reference
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