IRF9Z20 - параметры транзистора MOSFET, его аналоги, datasheet

IRF9Z20 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRF9Z20
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 57 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: TO220AB

Аналог (замена) для IRF9Z20

- подбор ⓘ MOSFET транзистора по параметрам

IRF9Z20 Datasheet (PDF)

..1. Size:415K 1
irf9z20 irf9z22.pdf pdf_icon

..2. Size:1215K vishay
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IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

..3. Size:1213K vishay
irf9z20 sihf9z20.pdf pdf_icon

8.1. Size:97K 1
irf9z25.pdf pdf_icon

8.2. Size:168K international rectifier
irf9z24ns.pdf pdf_icon

PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

8.3. Size:1214K international rectifier
irf9z24pbf.pdf pdf_icon

PD- 95415IRF9Z24PbF Lead-Free06/14/04Document Number: 91090 www.vishay.com1IRF9Z24PbFDocument Number: 91090 www.vishay.com2IRF9Z24PbFDocument Number: 91090 www.vishay.com3IRF9Z24PbFDocument Number: 91090 www.vishay.com4IRF9Z24PbFDocument Number: 91090 www.vishay.com5IRF9Z24PbFDocument Number: 91090 www.vishay.com6IRF9Z24PbFDocument Number: 91

8.4. Size:311K international rectifier
irf9z24s.pdf pdf_icon

PD - 9.912AIRF9Z24S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24S)VDSS = -60V Low-profile through-hole (IRF9Z24L) 175C Operating TemperatureRDS(on) = 0.28 Fast SwitchingG P- ChannelID = -11A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

8.5. Size:174K international rectifier
irf9z24.pdf pdf_icon

8.6. Size:2354K international rectifier
irf9z24npbf.pdf pdf_icon

PD - 94982IRF9Z24NPbF Lead-Freewww.irf.com 1 IRF9Z24NPbF2 www.irf.comIRF9Z24NPbFwww.irf.com 3IRF9Z24NPbF4 www.irf.comIRF9Z24NPbFwww.irf.com 5IRF9Z24NPbF6 www.irf.comIRF9Z24NPbFPeak Diode Recovery dv/dt Test Circuit *

8.7. Size:389K international rectifier
irf9z24nlpbf irf9z24nspbf.pdf pdf_icon

PD- 95770IRF9Z24NSPbFIRF9Z24NLPBF Lead-Freewww.irf.com 104/25/05IRF9Z24NS/LPbF2 www.irf.comIRF9Z24NS/LPbFwww.irf.com 3IRF9Z24NS/LPbF4 www.irf.comIRF9Z24NS/LPbFwww.irf.com 5IRF9Z24NS/LPbF6 www.irf.comIRF9Z24NS/LPbFwww.irf.com 7IRF9Z24NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS

8.8. Size:389K international rectifier
irf9z24nspbf irf9z24nlpbf.pdf pdf_icon

8.9. Size:110K international rectifier
irf9z24n.pdf pdf_icon

PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

8.10. Size:196K vishay
irf9z24 sihf9z24.pdf pdf_icon

IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require

8.11. Size:197K vishay
irf9z24pbf sihf9z24.pdf pdf_icon

8.12. Size:167K vishay
irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf pdf_icon

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

8.13. Size:166K vishay
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8.14. Size:193K vishay
irf9z24spbf sihf9z24l sihf9z24s.pdf pdf_icon

8.15. Size:815K cn vbsemi
irf9z24ns.pdf pdf_icon

IRF9Z24NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load

Другие MOSFET... IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9540N , IRF9Z22 , IRF9Z24 , IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 .