All MOSFET. 2SK3676-01SJ Datasheet

 

2SK3676-01SJ MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3676-01SJ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 195 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO263

2SK3676-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3676-01SJ Datasheet (PDF)

1.1. 2sk3676-01l-01s-01sj.pdf Size:264K _update

2SK3676-01SJ
2SK3676-01SJ

2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

4.1. 2sk3675-01.pdf Size:119K _update

2SK3676-01SJ
2SK3676-01SJ

2SK3675-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching 11.6±0.2 Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C un

4.2. 2sk3678-01.pdf Size:114K _update

2SK3676-01SJ
2SK3676-01SJ

2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unle

 4.3. 2sk367.pdf Size:202K _toshiba

2SK3676-01SJ
2SK3676-01SJ



4.4. 2sk3679-01mr.pdf Size:116K _fuji

2SK3676-01SJ
2SK3676-01SJ

2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

 4.5. 2sk3674-01l-s-sj.pdf Size:270K _fuji

2SK3676-01SJ
2SK3676-01SJ

2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl

4.6. 2sk3677-01mr.pdf Size:111K _fuji

2SK3676-01SJ
2SK3676-01SJ

2SK3677-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C un

4.7. 2sk3673-01mr.pdf Size:113K _fuji

2SK3676-01SJ
2SK3676-01SJ

2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C un

4.8. 2sk3677-01mr.pdf Size:256K _inchange_semiconductor

2SK3676-01SJ
2SK3676-01SJ

isc N-Channel MOSFET Transistor 2SK3677-01MR ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

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