2SK3678-01 Specs and Replacement
Type Designator: 2SK3678-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 270
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 9
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 140
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.58
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
2SK3678-01 datasheet
..1. Size:114K fuji
2sk3678-01.pdf 
2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
..2. Size:290K inchange semiconductor
2sk3678-01.pdf 
isc N-Channel MOSFET Transistor 2SK3678-01 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.58 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.1. Size:209K 1
2sk3670.pdf 
2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3670 Chopper Regulator and DC-DC Converter Applications Unit mm 2.5V-Gate Drive Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 150 V) Enhancement mode Vth = 0.5 1.3 V (VDS ... See More ⇒
8.3. Size:111K fuji
2sk3677-01mr.pdf 
2SK3677-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.4. Size:113K fuji
2sk3673-01mr.pdf 
2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.5. Size:264K fuji
2sk3676-01l-01s-01sj.pdf 
2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.6. Size:270K fuji
2sk3674-01l-s-sj.pdf 
2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.7. Size:116K fuji
2sk3679-01mr.pdf 
2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
8.8. Size:119K fuji
2sk3675-01.pdf 
2SK3675-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching 11.6 0.2 Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒
8.9. Size:357K inchange semiconductor
2sk3674-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3674-01S FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.10. Size:256K inchange semiconductor
2sk3677-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3677-01MR FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
8.11. Size:280K inchange semiconductor
2sk3673-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3673-01MR FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.12. Size:283K inchange semiconductor
2sk3674-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3674-01L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.13. Size:357K inchange semiconductor
2sk3676-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3676-01SJ FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.14. Size:357K inchange semiconductor
2sk3676-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.15. Size:280K inchange semiconductor
2sk3679-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3679-01MR FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.58 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and ... See More ⇒
8.16. Size:357K inchange semiconductor
2sk3674-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3674-01SJ FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.17. Size:346K inchange semiconductor
2sk3675-01.pdf 
isc N-Channel MOSFET Transistor 2SK3675-01 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.18. Size:283K inchange semiconductor
2sk3676-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3676-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
Detailed specifications: 2SK3528-01R
, 2SK3529-01
, 2SK3531-01
, 2SK3539
, 2SK3675-01
, 2SK3676-01L
, 2SK3676-01S
, 2SK3676-01SJ
, IRFB4227
, 2SK3680-01
, 2SK3681-01
, 2SK3682-01
, 2SK3684-01L
, 2SK3684-01S
, 2SK3684-01SJ
, 2SK3685-01
, 2SK3686-01
.
Keywords - 2SK3678-01 MOSFET specs
2SK3678-01 cross reference
2SK3678-01 equivalent finder
2SK3678-01 pdf lookup
2SK3678-01 substitution
2SK3678-01 replacement
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