All MOSFET. 2SK3686-01 Datasheet

 

2SK3686-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3686-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
   Package: TO220AB

 2SK3686-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3686-01 Datasheet (PDF)

 ..1. Size:193K  fuji
2sk3686-01.pdf

2SK3686-01
2SK3686-01

FUJI POWER MOSFET2SK3686-01200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 ..2. Size:289K  inchange semiconductor
2sk3686-01.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3686-01FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.1. Size:627K  toshiba
2sk368.pdf

2SK3686-01
2SK3686-01

2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Unit: mmConstant Current Applications High breakdown voltage: VGDS = -100 V (min) High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitGat

 8.2. Size:262K  fuji
2sk3684-01l-01s-01sj.pdf

2SK3686-01
2SK3686-01

2SK3684-01L,S,SJ200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ApplicationsP4 Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.3. Size:116K  fuji
2sk3681-01.pdf

2SK3686-01
2SK3686-01

2SK3681-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]Features High speed switching Low on-resistance11.60.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.4. Size:103K  fuji
2sk3683-01mr.pdf

2SK3686-01
2SK3686-01

2SK3683-01MR200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.5. Size:105K  fuji
2sk3685-01.pdf

2SK3686-01
2SK3686-01

2SK3685-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]Features High speed switching Low on-resistance11.60.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.6. Size:232K  fuji
2sk3688-01l-01s-01sj.pdf

2SK3686-01
2SK3686-01

2SK3688-01L,S,SJFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeatures Outline Drawings [mm]High speed switchingLow on-resistanceNo secondary breadownLow driving powerP4Avalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.7. Size:109K  fuji
2sk3680-01.pdf

2SK3686-01
2SK3686-01

2SK3680-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]Features High speed switching Low on-resistance11.60.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.8. Size:194K  fuji
2sk3687-01mr.pdf

2SK3686-01
2SK3686-01

FUJI POWER MOSFET2SK3687-01MR200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeatures Outline Drawings [mm]TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 8.9. Size:108K  fuji
2sk3689-01.pdf

2SK3686-01
2SK3686-01

2SK3689-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]Features High speed switching Low on-resistance11.60.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.10. Size:101K  fuji
2sk3682-01.pdf

2SK3686-01
2SK3686-01

2SK3682-01200309FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.11. Size:357K  inchange semiconductor
2sk3688-01s.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3688-01SFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.12. Size:270K  inchange semiconductor
2sk3681-01.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3681-01FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga

 8.13. Size:280K  inchange semiconductor
2sk3683-01mr.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3683-01MRFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.14. Size:346K  inchange semiconductor
2sk3685-01.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3685-01FEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.15. Size:272K  inchange semiconductor
2sk3680.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3680FEATURESStatic Drain-Source On-Resistance: R = 0.11(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.16. Size:199K  inchange semiconductor
2sk3681.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3681FEATURESStatic Drain-Source On-Resistance: R = 160m(Max)DS(on)With low gate drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 8.17. Size:284K  inchange semiconductor
2sk3684-01l.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3684-01LFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.18. Size:280K  inchange semiconductor
2sk3687-01mr.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3687-01MRFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.19. Size:357K  inchange semiconductor
2sk3688-01sj.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3688-01SJFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.20. Size:346K  inchange semiconductor
2sk3689-01.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3689-01FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.21. Size:358K  inchange semiconductor
2sk3684-01s.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3684-01SFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.22. Size:290K  inchange semiconductor
2sk3682-01.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3682-01FEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.23. Size:283K  inchange semiconductor
2sk3688-01l.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3688-01LFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.24. Size:358K  inchange semiconductor
2sk3684-01sj.pdf

2SK3686-01
2SK3686-01

isc N-Channel MOSFET Transistor 2SK3684-01SJFEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top