All MOSFET. IRF9Z24 Datasheet

 

IRF9Z24 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9Z24

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: TO220

IRF9Z24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9Z24 Datasheet (PDF)

1.1. irf9z24npbf.pdf Size:2354K _upd-mosfet

IRF9Z24
IRF9Z24

PD - 94982 IRF9Z24NPbF • Lead-Free www.irf.com 1 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit * • • ƒ •

1.2. irf9z24pbf.pdf Size:197K _upd-mosfet

IRF9Z24
IRF9Z24

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.28 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 19 • 175 °C Operating Temperature Qgs (nC) 5.4 • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration Single • Simple Drive Require

 1.3. irf9z24spbf.pdf Size:193K _upd-mosfet

IRF9Z24
IRF9Z24

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.28 • Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) • 175 °C Operating Temperature Qgs (nC) 5.4

1.4. irf9z24nlpbf irf9z24nspbf.pdf Size:389K _upd-mosfet

IRF9Z24
IRF9Z24

PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS

 1.5. irf9z24l.pdf Size:166K _upd-mosfet

IRF9Z24
IRF9Z24

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.28 • Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) • 175 °C Operating Temperature Qgs (nC) 5.4

1.6. irf9z24.pdf Size:174K _international_rectifier

IRF9Z24
IRF9Z24

1.7. irf9z24pbf.pdf Size:1214K _international_rectifier

IRF9Z24
IRF9Z24

PD- 95415 IRF9Z24PbF Lead-Free 06/14/04 Document Number: 91090 www.vishay.com 1 IRF9Z24PbF Document Number: 91090 www.vishay.com 2 IRF9Z24PbF Document Number: 91090 www.vishay.com 3 IRF9Z24PbF Document Number: 91090 www.vishay.com 4 IRF9Z24PbF Document Number: 91090 www.vishay.com 5 IRF9Z24PbF Document Number: 91090 www.vishay.com 6 IRF9Z24PbF Document Number: 91090 w

1.8. irf9z24ns.pdf Size:168K _international_rectifier

IRF9Z24
IRF9Z24

PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating Temperature RDS(on) = 0.175? P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.9. irf9z24n.pdf Size:109K _international_rectifier

IRF9Z24
IRF9Z24

PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.175? P-Channel G Fully Avalanche Rated ID = -12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

1.10. irf9z24s.pdf Size:311K _international_rectifier

IRF9Z24
IRF9Z24

PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175C Operating Temperature RDS(on) = 0.28? Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

1.11. irf9z24 sihf9z24.pdf Size:196K _vishay

IRF9Z24
IRF9Z24

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.28 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 19 175 C Operating Temperature Qgs (nC) 5.4 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements S Complia

1.12. irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf Size:167K _vishay

IRF9Z24
IRF9Z24

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4 Fast Switchin

Datasheet: IRF9953 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , CEP83A3 , IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 .

 

 
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